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| r09ds0036ej0300 rev. 3.00 page 1 of 13 jun 20, 2012 the mark nesg2101m05 r09ds0036ej0300 rev. 3.00 page 2 of 13 jun 20, 2012 electrical characteristics (t a = +25 c) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ? ? 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ? ? 100 na dc current gain h fe note 1 v ce = 2 v, i c = 5 ma 130 190 260 ? rf characteristics gain bandwidth product f t v ce = 3 v, i c = 50 ma, f = 2 ghz 14 17 ? ghz insertion power gain ? s 21e ? 2 v ce = 3 v, i c = 50 ma, f = 2 ghz 11.5 13.5 ? db noise figure (1) nf v ce = 2 v, i c = 10 ma, f = 2 ghz, z s = z sopt , z l = z lopt ? 0.9 1.2 db noise figure (2) nf v ce = 2 v, i c = 7 ma, f = 1 ghz, z s = z sopt , z l = z lopt ? 0.6 ? db associated gain (1) g a v ce = 2 v, i c = 10 ma, f = 2 ghz, z s = z sopt , z l = z lopt 11.0 13.0 ? db associated gain (2) g a v ce = 2 v, i c = 7 ma, f = 1 ghz, z s = z sop t, z l = z lopt ? 19.0 ? db reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0, f = 1 mhz ? 0.4 0.5 pf maximum stable power gain msg note 3 v ce = 3 v, i c = 50 ma, f = 2 ghz 14.5 17.0 ? db gain 1 db compression output power p o (1 db) v ce = 3.6 v, i cq = 10 ma, f = 2 ghz ? 21 ? dbm linear gain g l v ce = 3.6 v, i cq = 10 ma, f = 2 ghz ? 15 ? db notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capac itance when the emitter grounded 3. msg = h fe classification rank fb/yfb marking t1j h fe value 130 to 260 s 21 s 12 nesg2101m05 r09ds0036ej0300 rev. 3.00 page 3 of 13 jun 20, 2012 typical characteristics (t a = +25 c, unless otherwise specified) f = 1 mhz reverse transfer capacitance c re (pf) collector to base voltage v cb (v) reverse transfer capacitance vs. collector to base voltage 1.0 0.6 0.8 0.2 0.4 0246810 v ce = 1 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage v ce = 3 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage v ce = 2 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage v ce = 4 v 100 10 1 0.01 0.001 0.1 0.0001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 collector current i c (ma) base to emitter voltage v be (v) collector current vs. base to emitter voltage 700 500 600 400 200 300 100 0 25 50 75 100 125 150 total power dissipation p tot (mw) ambient temperature t a (?c) total power dissipation vs. ambient temperature mounted on polyimide pcb (38 38 mm, t = 0.4 mm) remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 4 of 13 jun 20, 2012 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 1 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 3 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 2 v 1 000 100 10 1 0.1 10 100 dc current gain h fe collector current i c (ma) dc current gain vs. collector current v ce = 4 v collector current i c (ma) collector to emitter voltage v ce (v) collector current vs. collector to emitter voltage 100 40 50 60 70 80 90 10 20 30 01234 5 6 i b = 50 a 300 a 500 a 350 a 400 a 450 a 200 a 150 a 100 a 250 a remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 5 of 13 jun 20, 2012 v ce = 1 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 20 5 10 15 0 10 1 100 v ce = 2 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 20 5 10 15 0 10 1 100 v ce = 3 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 20 5 10 15 0 10 1 100 v ce = 4 v f = 2 ghz gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collector current 20 5 10 15 0 10 1 100 remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 6 of 13 jun 20, 2012 v ce = 2 v i c = 50 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 1 v i c = 50 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 4 v i c = 50 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 v ce = 3 v i c = 50 ma frequency f (ghz) insertion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 40 35 30 25 20 15 10 5 0 0.1 1 10 100 mag msg |s 21e | 2 remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 7 of 13 jun 20, 2012 v ce = 1 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 1 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 1 v f = 3 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 20 15 10 5 0 ? ?0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 3 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 20 15 10 5 0 ? ?0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 2 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 8 of 13 jun 20, 2012 v ce = 3 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 3 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 3 v f = 3 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 20 15 10 5 0 ? ?0 1 10 100 mag msg |s 21e | 2 v ce = 4 v f = 3 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 20 15 10 5 0 ? ?0 1 10 100 mag msg |s 21e | 2 v ce = 4 v f = 2 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 v ce = 4 v f = 1 ghz collector current i c (ma) insertion power gain, mag, msg vs. collector current insertion power gain |s 21e | 2 (db) maximum available power gain mag (db) maximum stable power gain msg (db) 30 25 20 15 10 5 0 1 10 100 mag msg |s 21e | 2 remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 9 of 13 jun 20, 2012 v ce = 3.6 v, f = 1 ghz i cq = 10 ma 30 25 20 15 10 5 0 120 20 40 60 100 80 0 ?0 ? ?0 ?5 0 5 10 input power p in (dbm) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector efficiency c (%) g p p out i c c v ce = 3.6 v, f = 2 ghz i cq = 10 ma 25 20 15 10 5 0 ? 120 20 40 60 100 80 0 ?5 0 ? ?0 5 10 15 input power p in (dbm) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector efficiency c (%) g p p out i c c v ce = 3.6 v, f = 3 ghz i cq = 10 ma 25 20 15 10 5 0 ? 120 20 40 60 100 80 0 ?5 0 ? ?0 5 10 15 input power p in (dbm) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector efficiency c (%) g p p out i c c v ce = 3.6 v, f = 5.2 ghz i cq = 10 ma 25 20 15 10 5 0 ? 120 20 40 60 100 80 0 ?0 5 0 ? 10 15 20 input power p in (dbm) output power, power gain, collector current, collector efficiency vs. input power output power p out (dbm), power gain g p (db) collector current i c (ma), collector efficiency c (%) g p p out i c c remark the graph indicates nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 10 of 13 jun 20, 2012 5 4 3 2 1 0 25 10 5 20 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 1 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 2 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 1 v f = 3 ghz g a nf 5 4 3 2 1 0 25 10 5 20 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 1 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 2 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 2 v f = 3 ghz g a nf remark the graphs indicate nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 11 of 13 jun 20, 2012 5 4 3 2 1 0 25 10 5 20 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3 v f = 1 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3 v f = 2 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 3 v f = 3 ghz g a nf 5 4 3 2 1 0 25 10 5 20 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 4 v f = 1 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 4 v f = 2 ghz g a nf 4 3 2 1 0 20 5 10 15 0 1 10 100 collector current i c (ma) noise figure, associated gain vs. collector current noise figure nf (db) associated gain g a (db) v ce = 4 v f = 3 ghz g a nf remark the graphs indicate nominal characteristics. nesg2101m05 r09ds0036ej0300 rev. 3.00 page 12 of 13 jun 20, 2012 s-parameters s-parameters and noise parameters are provided on our web site in a form (s2p) that enables direct import of the parameters to microwave circuit simulators without the need for keyboard inputs. click here to download s-parameters. [products] [rf devices] [device parameters] url http://www.renesas.com/products/microwave/ nesg2101m05 r09ds0036ej0300 rev. 3.00 page 13 of 13 jun 20, 2012 package dimensions flat-lead 4-pin thin-type super mi nimold (m05, 2012 pkg) (unit: mm) 0.59?.05 0.11 +0.1 ?.05 (bottom view) (0.65) 0.65 1.30 2.0?.1 43 12 1.25?.1 2.05?.1 0.30 +0.1 ?.05 (top view) remark ( ) : reference value 0.5 (1.05) t1j pin connention 1. base 2. emitter 3. collector 4. emitter all trademarks and registered tr ademarks are the property of their respective owners. c - 1 revision history nesg2101m05 data sheet description rev. date page summary ? mar 2003 ? previous no. : pu10190ej02v0ds p.1 modification of ordering information p.2 modification of electrical characteristics modification of h fe classification p.12 modification of s-parameters 3.00 jun 20, 2012 p.13 modification of package dimensions notice 1. descriptions of circuits, software and other related information in this document are provided only to illustrate the operat ion of semiconductor products and application examples. you are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from the use of these circuits, software, or information. 2. renesas electronics has used reasonable care in preparing the information included in this document, but renesas electronics does not warrant that such information is error free. renesas electronics assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information incl uded herein. 3. renesas electronics does not assume any liability for infringement of patents, copyrights, or other intellectual property ri ghts of third parties by or arising from the use of renesas electronics products or technical information described in this document. no license, express, implied or otherwise, is granted hereby under any paten ts, copyrights or other intellectual property rights of renesas electronics or others. 4. you should not alter, modify, copy, or otherwise misappropriate any renesas electronics product, whether in whole or in part . renesas electronics assumes no responsibility for any losses incurred by you or third parties arising from such alteration, modification, copy or otherwise misappropriation of renesas electronics product. 5. renesas electronics products are classified according to the following two quality grades: "standard" and "high quality". t he recommended applications for each renesas electronics product depends on the product's quality grade, as indicated below. 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